Abstract
We have grown AlN films on (Mn,Zn)Fe 2O 4 by pulsed laser deposition and investigated the growth temperature dependence of their structural properties using grazing-incidence X-ray reflection (GIXR), atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED) and X-ray diffraction. We have confirmed that high-quality AlN films can be grown in the substrate temperature range from room temperature to 800 °C. We have also found that the films grown at low temperatures have greater strain and smoother surfaces due to the reduced motion of atoms during growth. GIXR measurements have revealed that the abruptness of the heterointerface between the AlN films and the substrates is improved by a reduction in the growth temperature.
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