Abstract
The study highlights the effects of growth temperatures ranging from 500 to 650 °C on the properties of indium nitride (InN) thin films prepared by sol-gel spin coating method followed by nitridation, also, the growth mechanism was studied in depth. The findings revealed that the InN crystal growth was promoted at the growth temperature of 600 °C, by which the crystalline quality of the deposited thin films was improved and the densely packed InN grains were formed. However, thermal decomposition of InN was observed at increasing temperature to 650 °C. Apart from that, the infrared (IR) reflectance measurement shows the presence of transverse and longitudinal-optical phonon modes of wurtzite structure InN. These vibrational modes were found to be slightly shifted from the theoretical values as a result of the incorporation of oxygen contamination in the deposited thin films.
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