Abstract
Growth temperature dependence of the self-formation process of quantum dot (QD) structures in (GaP)1.5 (InP)1.88 short-period superlattices (SLs) grown on GaAs (311)A substrates is studied by scanning tunneling microscopy (STM). SLs are grown by gas-source molecular beam epitaxy (MBE) at 420–500°C. The STM image of the sample grown at 460°C reveals completely self-formed QD structures aligned along both [233] and [011] directions due to the strain-induced lateral composition modulation. On the other hand, both below (420°C) and above (480°C, 500°C) this temperature the self-formation process of QD structures is suppressed and only incomplete structures elongated along the [011] direction are formed, probably due to the suppressed or over-enhanced migration of group III atoms on the surface, respectively. Scanning tunneling spectroscopy (STS) measurements reveal that the amplitude of the lateral periodic variation of the band-gap energy in the self-formed structures also decreases both below and above the optimum growth temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
