Abstract
The dependence of optical modal gain and loss on GaN:Eu growth temperature is reported. GaN:Eu thin films were grown on Si substrates with AlGaN transition and cladding layers at temperatures ranging from 600 degrees C to 850 degrees C. The modal gain and loss in the GaN:Eu layer were a strong function of the optically active Eu atomic concentration and of the interface quality between the active layer and the top cladding layer, which in turn depended on the growth temperature. Optimum optical properties of maximum modal gain of ~ 100 cm(-1) and minimum loss of ~ 46 cm(-1) were obtained for growth at 800 degrees C.
Highlights
Rare earths (RE) ions display very narrow light emission lines due to inner shell transitions [1]
GaN:Eu thin films were grown on Si substrates with AlGaN transition and cladding layers at temperatures ranging from 600°C to 850°C
The modal gain and loss in the GaN:Eu layer were a strong function of the optically active Eu atomic concentration and of the interface quality between the active layer and the top cladding layer, which in turn depended on the growth temperature
Summary
Rare earths (RE) ions display very narrow light emission lines due to inner shell transitions [1]. Solid state laser systems based on RE ions are a versatile light source, primarily in the infrared. The doping of GaN with trivalent rare earth ions (RE3+) has been shown [3] to produce excellent emission at visible and infrared wavelengths. We report on how the GaN growth temperature affects the optical gain and loss of the GaN:Eu active layer through its materials characteristics. The GaN:RE growth temperature on conventional Si substrates is known to strongly effect photoluminescence (PL) properties for films deposited by either MBE [6] or sputtering [7]. Reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and scanning electron microscopy (SEM) were used to investigate the effect of growth temperature on material characteristics of GaN:Eu active layer
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