Abstract

Scanning tunneling microscopy (STM) connected to molecular beam epitaxy (MBE) has been used to investigate InAs islands and wetting layers (WLs) on GaAs[001] substrates. STM results reveal that the size and density of InAs islands strongly depend on the growth temperature. The density of InAs islands decreases and their size increases with increasing growth temperature. From photoluminescence (PL) results, a PL peak shift is observed with increasing InAs growth temperature. This shift agrees with the results of the STM observation that larger islands are grown at higher growth temperature.

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