Abstract
The growth temperature ( T G ) dependence of crystallographic and luminescent properties of ZnSe, ZnS and ZnS x Se 1− x epilayers grow by a low-pressure MOVPE system has been investigated. High-quality ZnSe and ZnS x Se 1− x ( x = 0.02–0.05) layers have been obtained on GaAs substrates at a T G of as low as 250°C. These layers have exhibited strong blue photoluminescence (PL) as well as low resistivity. Intense near-band edge cathodoluminescence at room temperature has been observed in ZnS on GaAs. 4.2 K PL spectra of ZnSe and ZnS x Se 1− x epilayers on GaAs have been presented and discussed.
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