Growth Style of Bi4Ti3O12 Thin Films on CeO2/Ce0.12Zr0.88O2 Buffered Si Substrates

Abstract

Epitaxial Bi4Ti3O12 thin films are grown on CeO2/Ce0.12Zr0.88O2 buffered Si(100) substrates. The buffer consists of 40 Å Ce0.12Zr0.88O2 and 80 Å CeO2 layers which are grown on Si(100) substrates by an e-beam evaporation method. Bi4Ti3O12 films are grown by the molecular beam epitaxy method using the Bi self-limiting function. Epitaxial growth of these layers on Si is confirmed by X-ray diffraction analyses. Growth style of Bi4Ti3O12 films is examined in detail by observations of reflection high-energy electron diffraction and atomic force microscopy, and the growth mechanism is discussed.