Abstract
Wurtzite GaN is usually used for optoelectronic devices. Because of the growth along the polar c-axis, the strong piezoelectric and spontaneous polarizations fields result in a band bending which is responsible for the poor electron-hole overlap in quantum well structures. The growth along the m-plane direction is one possibility to deposit non-polar material and leads to efficient recombination across the entire well of the QW structure. LiAlO2 (LAO) offers the advantage to grow GaN along the m-plane direction. This work provides the results from investigations on the deposition of GaN-based structures on LAO substrates by metal-organic chemical vapor deposition. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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