Abstract
Mn0.3Ag0.7In4.1S6.8 single crystals were grown by directed melt crystallization. Their composition and crystal structure were determined. It was established that the Mn0.3Ag0.7In4.1S6.8 single crystals crystallized in the cubic spinel structure. The band gap of the single crystals was estimated and its temperature dependence was constructed using transmission spectra in the region of the fundamental absorption edge in the range 20–320 K. The temperature dependence of the band gap was shown to have the form characteristic of semiconductor materials.
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