Abstract

Tungsten trioxide (WO 3) thin films are of great interest due to their enormous and promising applications in various opto-electronic thin-film devices. We have investigated the structural, electrical, and optical properties of the WO 3 thin films grown by thermal evaporation of WO 3 powder and their dependence on growth condition. The WO 3 thin films were grown on glass substrates at different substrate temperature varying from room temperature to 510 °C. The structural characterization and surface morphology were carried out using X-ray diffraction and atomic force microscopy, respectively. The amorphous films were obtained at substrate temperatures below 450 °C whereas films grown above 450 °C were crystalline. The surface roughness and the grain size of the films increase on increasing the substrate temperature. The electrical characterization has been carried out using four-point-probe methods. The resistivity of the films decreases significantly while the carrier concentration and mobility increase with the substrate temperature. The transparency and optical energy band-gap, E g, of the films are found to decrease monotonically as the substrate temperature increases.

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