Abstract
In the present study, a growth strategy allowing widening thick heavily boron doped (113)-oriented diamonds is proposed. It relies on a geometrical model developed at the LSPM, which is used to visualize the evolution of the deposited crystal shape. This model helped us to identify the specific growth parameters allowing to slow down the growth rate along 〈113〉 direction and, at the same time, continuously increase the area of this crystalline face. Depositions have been carried out and has resulted in a significant increase of 145% of the top-surface area, giving a functional surface of 3.7mm in diameter after a growth of 930µm, starting from 2.3mm. The resistivity, measured by four-point probe system, reaches a value as low as 5mΩ.cm, which is comparable to the best results obtained on thick layers grown on the conventional (100) orientation.
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