Growth stability in high temperature vapour growth

Abstract

Growth stability is studied in a system for high temperature vapour growth of PbSnTe. The transition from unstable to stable growth conditions is observed. The observation compared with theoretical analysis of the concentration and temperature field in the crystal and vapour at the growth interface confirms the recently published theory of Louchev [1] [J. Crystal Growth 140 (1994) 219] concerning diffusion, heat transfer, equilibrium molecular density and kinetics mechanism of morphological instability in physical vapour deposition and our conception of constitutional supersaturation criterion [2] [Grasza, in: Mass and Heat Transfer, Elementary Crystal Growth]. It is shown, that, additionally to the dependence of the morphological stability on the kinetic coefficient, the relation of the temperature gradient across the depositing layer to the gradient of concentration of the deposited substance in front of the growth interface, and the dependence of equilibrium molecular density (pressure) of the depositing substance on temperature, are the most important factors influencing the stability of the solid-vapour interface.