Abstract
In the diamond growth by temperature gradient method under high pressure and high temperature, the growth of a high-quality diamond crystal without metal inclusions has been investigated. Large high-quality type IIa diamond crystals without impurities of 7–8 ct (about 10 mm across) can be grown at a high growth rate of 6–7 mg/h by prolonged maintenance of a high-precision temperature control with an adequate selection of solvent metal and additives. Type Ib diamond crystals containing nitrogen impurities can be grown at higher growth rates up to 15 mg/h by using large seed crystals and adjusting the morphology with temperature control. This large seed method is not applicable for growing a type IIa diamond crystal because it is hard to control the crystal morphology of it.
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