Abstract
We have investigated nitridation processes on clean Si(100)-2×1 surfaces and the electrical characteristics of metal-insulator-semiconductor (MIS) capacitors with nitride films formed by radical nitrogen. The radical nitrogen exposure to Si surfaces at 500°C initially causes both nitridation of Si and local detachment reactions on the surface. It is found from scanning tunneling microscopy and scanning tunneling spectroscopy that the nitridation proceeds in a layer-by-layer manner in which a continuous film is formed by the coalescence of two-dimensional islands. At nitride thicknesses above 0.6 nm, the nitride film is homogeneously formed over the entire surface. The MIS capacitor with a 5.4-nm-thick nitride film formed by radical nitrogen shows low hysteresis of less than 0.1 V and low leakage current density. These electrical properties indicate that the nitride films formed by radical nitrogen are applicable to gate insulators.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
