Abstract
The growth-mode transition of strained GaAs heteroepitaxial growth on GaP(001) is studied in detail using reflection high-energy electron diffraction (RHEED). The lattice parameter oscillation during layer-by-layer growth and the increase of the critical thickness of the growth-mode transition with increase of the growth rate reflect the elastic strain relaxation around the edge of two-dimensional nuclei and the existence of the kinetically controlled evolution of islands, respectively. The transformation from a strained metastable layer structure to a relaxed stable island structure is revealed through analyses of the RHEED pattern. We propose a model to explain the increase of the critical thickness, which assumes two processes at the surface, the formation of a metastable layer and its transformation to islands.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
