Abstract
We studied the effects of growth pressure on Si1−xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6–220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2–0.5 nm, determined by x-ray reflectivity.
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