Abstract
In our work, we optimized the growth conditions for the single phase growth of Sr2CoO4 (SCO) thin films on single crystalline (001)LaAlO3 (LAO) substrates using the non-equilibrium process of pulsed laser deposition (PLD). We varied substrate temperature (Ts) from 720 °C to 840 °C and also studied the effect of oxygen partial pressure (OPP) and laser repetition rate (f) on the structural evolution of the grown films. It turns out that OPP of 300 mTorr, laser repetition rate of 4Hz and substrate temperature (Ts) at 800 °C helps in good crystalline and less resistive phase growth of SCO film on LAO substrate. We also determined valence state of Co in Sr2CoO4.
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