Growth, optical and dielectric studies of glycine doped ammonium dihydrogen phosphate NLO crystal: potential material for optoelectronics applications

Abstract

A 3 mole% glycine doped ADP crystal was grown by slow evaporation technique at ambient temperature. The incorporation of glycine was analyzed qualitatively by FT-IR analysis. The grown crystal exhibits high transmittance in the entire visible region and lower cut-off wavelength has been found to be 306 nm. The optical band gap is found to be 5 eV. The high optical quality of the grown crystal was ascertained by lower values of extinction coefficient (k) and refractive index (n). The dielectric constant and the dielectric loss decreases with the increasing frequency. Thermal studies of the grown crystal confirmed its stability up to 205 °C. The relative SHG efficiency for 3 mole% glycine doped ADP was measured using Nd:YAG laser and the value observed to be 1.88 times that of pure ADP.