Abstract
The phase diagram of the Ga2Se3–In2Se3 system was investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0. 01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R=500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R=210 MΩ) was measured.
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