Abstract
High-quality ZnSe-ZnS strained-layer superlattices were successfully grown on Si substrate by atomic layer epitaxy using a metal-organic chemical vapor deposition system. The characteristics of the ZnSe-ZnS strained-layer superlattices were investigated. Using photoluminescence measurements, an intense excitonic emission line and no emission due to deep levels were observed. As the ZnSe well-layer thickness increased, the peak of the line shifted markedly towards the lower-energy side. This behavior may be related to the quantum size effect. As the thickness of the ZnSe well-layer decreased, the activation energy increased. The ZnSe thickness is less than the three-dimensional exciton Bohr radius in bulk ZnSe. It is proposed that the dependence of the activation energy is due to two-dimensional exciton behavior in quantum wells.
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