Abstract
The growth conditions of ZnSe single crystals were investigated by chemical vapor transport (CVT) and physical vapor transport (PVT) methods. The growth temperatures were about 850°C (CVT) and 1100°C (PVT). Single crystals of 18–20 mm diameter, 30 mm long and orange colored were grown. The homogeneity of crystals was measured. The etch pit density of good crystals is in the range of (1–4)×10 4 cm −2, full-width at half-maximum (FWHM) of (0 0 4) X-ray double crystal rocking curve is 17 arcsec. These data indicate that the crystals have good homogeneity and no twin crystal boundaries.
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