Abstract
Large ZnSe single crystals (14x14x20 mm 3) have successfully been grown from the vapor phase by iodine transport. Substrates with large area (10x10 mm 2) for epitaxial growth were prepared by cutting the crystal. It is important to control the temperature fluctuation and seed direction for rapid growth. As an etchant for the measurement of dislocation density, the NaOH solution on (111) B is better than the Br-CH 3OH solution on (111) A. The etch-pit density is (2–7)x10 4/cm 2. The iodine concentration in the crystal is about 200 ppm. The resistivity of the ZnSe crystal annealed in molten Zn is 0.03 Ω cm.
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