Abstract
ZnS x Se 1− x layers were grown by MBE using Zn, Se and ZnS as source materials. The sulfur mole franction x was varied between 0 and 0.3. The quality of epilayers was found to be improved around the lattice-matching composition to the GaAs substrate ( x=0.055−0.069) judging from the lattice relaxation, FWHM values of X-ray rocking curve and the photoluminescence spectra.
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