Abstract
The growth of c-axis oriented ZnO thin films on c-plane Al 2O 3 via molecular beam epitaxy (MBE) using dilute ozone (O 3) as an oxygen source was investigated. Four-circle X-ray diffraction (XRD) indicates that films grown at 350 °C are epitaxial with respect to the substrate, but with a broad in-plane and out-of-plane mosaic. The films were highly conductive and n-type. Epitaxial film growth required relatively high Zn flux and O 3/O 2 pressure. The growth rate decreased rapidly as growth temperature was increased above 350 °C. The drop in growth rate with temperature reflects the low sticking coefficient of Zn at moderately high temperatures and limited ozone flux for the oxidation of the Zn metal. Characterization of the films included atomic force microscopy (AFM), X-ray diffraction, photoluminescence, and Hall measurements. These results show that molecular beam epitaxy of ZnO using ozone is rate limited by the ozone flux for growth temperatures above 350 °C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.