Abstract
ZnO thin films were grown by using MOCVD with separated nozzles and a vertical-type highspeed rotating disk reactor. The interaction between source gases is prevented by the separated nozzles. The high-speed disk rotating system realized laminar flow by suppressing the thermallyinduced buoyancy flow, and it will be possible to inhibit the oxygen vacancies because the source gases are attracted on the substrate by the centripetal force. High thickness uniformity of below 2.0 % variation was obtained in 2-inch-diameter wafers. The results of the photoluminescence and the Hall-effect measurements were compared to the results obtained for conventional horizontal-type reactor and showed a suppression of the green emission band and of the carrier concentration, which shows the advantage of the high-speed rotating disk reactor.
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