Abstract
We report a soft and template-free electrochemical deposition method to prepare wafer-scale high-quality ZnO nanoneedle arrays on oriented gold-film-coated silicon substrates at temperatures as low as 70 °C. SEM, XRD, and TEM data show that the ZnO nanoneedles are of single-crystal wurtzite structure and preferentially oriented along the c-axis perpendicular to the substrates. Such ZnO nanoneedle arrays exhibit strong ultraviolet emissions at room temperature but very weak defect-related visible emissions. The blue shift of the low-temperature ultraviolet emission compared with that at room temperature further confirms its excitonic origin. The nanoneedle growth mechanism can be attributed to formation of {0001}-oriented ZnO nuclei on the oriented gold-coated silicon substrate and then faster growth along the 〈0001〉 direction in terms of minimum interface and surface energy.
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