Abstract
Using a halide vapor phase epitaxy (HVPE) technique in which the starting materials are ZnCl 2 generated by the reaction between high purity Zn metal (7 N grade) and Cl 2 gas, and H 2O, ZnO crystals have been grown at a high temperature of 1000 °C on sapphire substrates with and without surface nitridation treatment. It was found that the nitridation treatment resulted in a change of the (112̅0) sapphire surface to a (0001) AlN structure, leading to two possible sets of orientations for (0001) ZnO crystals. In addition, the nitridation treatment leads to a smaller average ZnO grain size and a higher density of nuclei.
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