Abstract
The crystal structure and phase transition of ZnInGaS 4 were described. The ZnInGaS 4 had both a defect chalcopyrite and a layered structure below 920 °C, and only the layered structure ZnInGaS 4 existed between 920 and 1020 °C. The layered structure ZnInGaS 4 was grown using the normal freezing method. The bandgap of the layered structure ZnInGaS 4 was estimated to be approximately 2.6 eV and it is possibly a direct bandgap. This is a first step toward realizing the novel functions of ZnInGaS 4.
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