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Abstract
The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.
Highlights
We demonstrated that vertically wellaligned InN nanorods can be grown on amorphous glass
Several templates were prepared to improve the preferential orientation of the InN nanorods
It was found that the alignment of the nanorods is highly dependent on the templates
Summary
Besides the great successful applications in commercial light-emitting diodes and high-electron-mobility transistors [1,2,3,4,5,6,7,8,9,10,11,12,13], III-nitrides have emerged as promising candidates for applications in photovoltaics (PVs) [14,15,16], water splitting [17,18,19], and piezotronics [20] because of their remarkable properties including wide bandgap range (0.68~6.2 eV) [21,22,23], high chemical inertness [24], and large piezoelectric coefficients [25]. IIInitrides are formed on single-crystalline substrates (sapphire, Si, SiC, etc.) which have a good epitaxial relationship with them These substrates are expensive and have small wafer size, limiting their usage in larger scale fabrication (greater than single-crystal substrates). In future possible applications of III-nitrides such as flat panel display, PVs, and hydrogen production, largesize and cheap substrates are the key factors to reduce the system cost. In this regard, growth of III-nitrides on glass or common metal substrates is highly desired because these substrates have large wafer size and low manufacturing cost. Due to the lack of global epitaxy, it is very difficult to obtain single-crystalline semiconductor films on these substrates
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