Growth of vertical cavity on buried-oxide substrate by gas-source Si molecular-beam epitaxy and coupled mode luminescence of strained Si1−xGex/Si quantum wells

Abstract

Successful growth of a new class of Si-based vertical cavity structure is demonstrated using a buried-oxide substrate [separation-by-implantation-oxygen (SIMOX)] by gas source Si molecular beam epitaxy. The cavity is terminated with the Si/buried-oxide and top Si/air interface mirrors. Integration of strained Si1−xGex/Si quantum wells in the vertical cavity lead to the observation of spectral coupling of luminescence to the cavity longitudinal modes. Clear oscillations were observed in reflectance and photoluminescence excitation spectra.