Abstract
Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
