Abstract
Thin MnSi films growing by units of a quadruple layer of a B20-type structure are observed on the Si(111) surface by scanning tunneling microscopy. Based on the observation, a model of growth controlled by an interplay between MnSi crystal growth and supply of Si atoms from substrate is proposed. A simple Monte Carlo model efficiently simulating significant experimentally observed features is presented. [DOI: 10.1380/ejssnt.2008.276]
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