Abstract
U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.
Highlights
Graphene, an ideal 2D versatile carbon material with a combination of the honeycomb-like arrangement, has drawn extensive attention in the research field, due to its good properties, such as high carrier mobility [1], mechanical tensile strength [2], and thermal conductivity [3]
2a, we successfully large-sized U-shaped graphene an appropriate growth by introducing a higher CHsynthesized
The scanning electron microscopy (SEM) image shows the U-shaped graphene domains were merged together in two different ways, namely straight-edge merging with the straight one, and straight-edge merging with the curved one
Summary
An ideal 2D versatile carbon material with a combination of the honeycomb-like arrangement, has drawn extensive attention in the research field, due to its good properties, such as high carrier mobility [1], mechanical tensile strength [2], and thermal conductivity [3]. On the one hand, using the CVD method for preparing large-area graphene on a copper foil surface is a synthetic way with great potential for industrial development, but the growth of graphene is accompanied by crystal imperfections and boundaries [13,14] This has a great influence on its properties and provides an obstacle to the formation of a high-quality single-layer graphene, and this has brought great difficulties to its research and application. Van et al [31] reported that the surface of a copper foil was pretreated by chemical-mechanical polishing in order to reduce the roughness and defects of the Cu foil, which was later used as a substrate for the growth of a single-crystal graphene by CVD During that process, they obtained a large-area graphene film by the seamless stitching of the graphene grains to the regular hexagonal graphene domains. The U-shaped graphene size could change when the methane flow rate was adjusted, and the morphology of the graphene domain could be different when the hydrogen flow rate was adjusted
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