Abstract
We demonstrate type-II InP quantum dots (QDs) in InGaP matrix grown using solid-source molecular beam epitaxy (SS-MBE). The QD size becomes larger and photoluminescence peak wavelength longer as the growth rate of InP QDs decreases. Large size type-II InP QDs can be grown with an ultra-low growth rate of 0.006 monolayer (ML)/s. The InP QDs grown with 0.006 ML/s have long carrier life time of about 40 ns. This result indicates that type-II InP/InGaP QDs are fabricated using SS-MBE for the first time.
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