Abstract
Template assisted selective epitaxy (TASE) offers an attractive monolithic integration route for III-V semiconductors on Si, benefitting from reduced defect density and versatility in its employment to create various electronic and photonic devices. This work achieves compositional and morphological control of lattice matched InGaAs quantum wells embedded in a horizontal InP nanowire grown directly from a Si seed and of the respective heterointerfaces. A series of growth experiments introducing variations of the precursor switching sequence in the growth recipe, and a subsequent scanning transmission electron microscopy and energy dispersive X-ray spectroscopy analysis, were employed to create and characterize a type I superlattice enclosed in a silicon oxide template.
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