Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments

Abstract

Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) are highly attractive as an emerging class of 2D materials, but only a few methods are available for fabricating them. These methods rely on the initial growth of 2D TMDCs in one process, followed by an additional plasma or high-temperature (T) process. To overcome these drawbacks, we employ the new approach of NaCl-assisted single-process chemical vapor deposition, which consists of three steps that proceed only by altering the temperature in situ. In the first step, MoS2 is deposited onto a SiO2/Si substrate with the Mo and S atoms activated in different temperature zones. In the second step, S vacancies are formed in the upper layer of the grown MoS2 by annealing. In the third step, the vacancies are filled with activated Se atoms. Throughout the steps, NaCl lowers the melting point of the constituent atoms, while the T in each zone is properly controlled. The growth mechanism is clarified by a separate annealing experiment that does not involve a supply of activated atoms. These results highlight a simple and cost-effective approach for growing Janus MoSSe, which is more useful for fundamental studies and device applications.