Growth of triangular shaped InGaAs/GaAs quantum wire structures

Abstract

In the future, semiconductor device technology will be developed based on nanometer sized ultra fine quantum structures. Recently, low dimensional structures such as quantum wires (one dimensional system) and quantum dots (zero dimensional system) have been actively investigated in many research laboratories [1–4]. It has been predicted that optical transitions and electrical transport properties should be significantly modified in low dimensional structures. To fabricate low dimensional quantum structures, the control of the confined region is very important. Thus several approaches have been proposed to fabricate such low dimensional structures. Selective area epitaxy [3–6] by metalorganic chemical vapor deposition (MOCVD) is one of the most attractive techniques for providing direct control of the confined region in low dimensional structures. In this work, we report on highly selective In0.2Ga0.8As/GaAs quantum wire structures grown by