Growth of TlBa2Ca2Cu3O9 Epitaxial Thin Films by Two-Step Method in Argon**Supported by the National Natural Science Foundation of China under Grant No 51002081, the Fundamental Research Funds for the Central Universities of China, and the Research Program of Application Foundation and Advanced Technology of Tianjin under Grant No 15JCQNJC01300.

Abstract

TlBa2Ca2Cu3O9 (Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning. Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO3 (001) substrates using dc magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100°C compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone, from 790°C to 830°C. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110 K, and the critical current Jc (77 K, 0 T) is up to 2.13 × 106 A/cm2.