Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

Abstract

Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e. g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depth profiles indicate that the films grown between RT and 500°C are stoichiometric TiC. Film/substrate interdiffusion is observed at 600°C substrate temperature and higher.