Abstract
The growth of a three-dimensional (3D) InAs quantum dot (QD) crystal on a patterned GaAs (0 0 1) substrate is demonstrated. The morphology of QDs grown on a surface patterned with shallow holes is studied as a function of the amount of deposited InAs. We observe that the QDs form in the patterned holes close to each other forming lateral QD bimolecules for InAs coverages below the commonly observed critical thickness of ∼1.6 monolayers. When the coverage increases, the QD bimolecules coalesce to form larger single QDs. The QDs in the holes are then capped with a Ga(Al)As spacer. The buried QD array serves as a strain template for controlling the formation site of the QDs in the second layer. By tuning the growth conditions for the second and subsequent layers, we achieve a 3D InAs QD crystal with a high degree of perfection. A detail investigation of the growth on hole patterns with different periodicities is presented.
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