Abstract
AbstractThe initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ~ 3 ML) leads to the growth of NiSi2 which is thought to be a diffusion barrier that terminates further formation of NiSi2 at room temperature.
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