Abstract
AbstractMetal‐Source Vapor Phase Epitaxy (MVPE), which takes advantage of the reaction of Zn vapor and H2O vapor at high temperature, was employed to grow thick epitaxial ZnO films on c‐sapphire substrates. This method exhibits high growth rate (>120μm/h), good crystallinity and thickness uniformity. A re‐growth method is used to control the polarity of ZnO films and both Zn‐polar and O‐polar samples are obtained. The structural and electric properties and morphology of the samples were characterized by X‐ray diffraction (XRD), Hall measurements and scanning electron microscope (SEM), respectively. The samples' polarities were identified by wet etching method. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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