Abstract
High crystalline quality epitaxial films of orthorhombic gallium oxide ε(kappa)-Ga2O3 with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(kappa)-Ga2O3 crystals for practical applications in electronics and sensor technology. Keywords: gallium oxide, halide vapor phase epitaxy, polymorph, X-ray diffraction
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