Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

Abstract

Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100 ºC by hydride vapor phase epitaxy (HVPE) using AlCl3 and NH3 as source gases. Growth rate over 10 µm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (P), and decreased rapidly with increase of P. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)