Abstract
Thick films of (112¯0)-oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240μm thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN nanomask suitable for lateral overgrowth during HVPE. An estimate of the void size required to allow spontaneous delamination of the substrate at the TiN–GaN interface is discussed with reference to growth conditions.
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