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Abstract
We have studied the formation of Ge(001) c(8 × 2)–Au surfaces on vicinal samples by scanning tunneling microscopy. The vicinal samples are tilted 1° toward [110]. The c(8 × 2)–Au surface is prepared by depositing 0.75 ± 0.05 ML of Au onto a germanium surface held at 800 K. The anisotropy introduced by the atomic steps of the vicinal surface and the preferential etching of S B steps during Au deposition is sufficient to introduce a preferred growth direction for the c(8 × 2)–Au phase. The result is a sample on which 78% of the surface is populated by Au-induced chains oriented parallel to the step direction. These parallel Ge(001) c(8 × 2)–Au domains are separated by single or multiple height D A steps (0.28 nm high).
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