Abstract
Insium-dopod zinc thin films were grown using the chemical spray deposition technique and different doping compounds in the solution. The partucular, indium chloride, indium sulfate and indium acetate were used as indium sources. The films show a high degree of preferential crystalline orientation which depends mainly on the type of doping compound and the substrate temperature. The lowest value o the resistivity is 2 × 10 −3 ω cm and and the transmittance is on average higher than 90%. It was found that the texture of the films could be change quite easily making it possible to grow films for different applications.
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