Abstract
Although terbium gallium garnet (TGG) single crystals suitable for practical applications have been grown by the Czochralski technique due to its congruent melting nature, the interface shape readily deteriorates to spiral growth when grown with a flat interface or facet formation when grown with a convex interface. The Edge-defined Film-fed Growth (EFG) method was used to grow TGG crystals for the first time. The influence of the raw material sintering temperature, growth atmosphere, growth rate and other growth conditions on the crystal quality were investigated. The Verdet constant of as-grown crystal was measured as 39rad/T.m at 1064nm by the extinction method, which was close to the literature value. The source of color centers in the crystals is also discussed.
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