Abstract
To realize next generation electronics, liquid phase crystallization of germanium based materials on quartz substrates is investigated by continuous wave laser annealing system which enables microsecond annealing. As a result, large grain polycrystalline germanium thin film with ∼0.6% tensile strain has successfully grown on quartz substrates. Moreover, we have applied this method on germanium-tin thin film growth and realized germanium-tin crystals with high substitutional tin concentration (up to ∼13%). By using these films, modulation phenomena of tin concentration in the crystals depending on annealing time were observed. From the phenomena, we could also closely discuss about strong correlation of substitutional Sn concentration on Raman signals. These findings and discussions will facilitate the study of germanium-tin thin film growth and characterization.
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