Abstract
The effect of grain-boundary particles on the oxidation process of Ta thin films and on Ta-oxide morphology, has been investigated. Oxidation was performed in air, in a temperature interval between 300 and 700 K. Grain boundary particles mostly of spherical form, of size ∼0.2 μm, dislocations, and dislocation loops have been found by means of SEM. The increased oxidation temperature caused movement of dislocations during the oxidation process. The analysis indicates that a grain boundary dislocation can pass the particles by either climbing over them, or bowing between them. A dislocation passing the particles strongly affects both oxidation rate and morphology of the oxide through the stress concentration at the particles. The result is a roughening of the surface of the Ta-oxide and, in some cases, a highly increased oxidation rate in the stress-affected area.
Published Version
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